110GHz Ultra-Wideband Attenuator Launches - Usherting in a New Era of Millimeter-Wave and Terahertz Applications

Introduction

With the acceleration of 5G millimeter-wave commercialization, the launch of 6G technology research and development, and the upgrade of satellite communications, radar, and electronic warfare systems, the demand for high-frequency signal processing (from millimeter-wave to terahertz) is rapidly increasing. ESJ Technology recently launched a 1-Watt, 110GHz ultra-wideband attenuator, filling the market gap for precise control of high-frequency, high-power signals and providing a key solution for next-generation communications, defense, test and measurement, and other fields.

 

Technical Highlights

This attenuator utilizes advanced thin-film processing and broadband matching technology to achieve excellent performance in the ultra-high frequency band:

 

1. Ultra-Wide Band Coverage (DC-110GHz): Supports full-band signal control from DC to the terahertz front end, suitable for millimeter-wave (24-100GHz) and future 6G candidate bands (such as 92-300GHz).

2. High Power Handling (1 Watt CW): Breaking through the power limitations of traditional attenuators at high frequencies, this attenuator can stably handle high-power signals up to 30 dBm, avoiding performance degradation caused by thermal dissipation.

3. Low Insertion Loss (<1.5 dB) and High Accuracy (±0.3 dB): Reduces energy loss in the signal chain, ensuring measurement accuracy in test systems and communications equipment.

4. Compact Package and High Reliability: Available with surface-mount (SMT) or coaxial packaging, it adapts to high-density integration scenarios and operates in a temperature range of -40°C to +85°C.

 

Core Application Scenarios

1. 5G/6G Communications

- Millimeter-Wave Base Stations: In high-frequency base stations such as 28 GHz and 39 GHz, attenuators prevent RF front-end oversaturation and optimize signal dynamic range.

- 6G Terahertz Research: Providing critical support for channel sounding and device calibration in frequency bands above 92 GHz.

 

2. Satellite Communications

- Low Earth Orbit (LEO) constellations (such as Starlink): Address power balancing issues for Ka-band (26-40 GHz) and V-band (40-75 GHz) satellite signals.

- High Throughput Satellite (HTS): Ensure signal stability in high-frequency satellite-to-ground links.

 

3. Defense and Radar

- Electronic Warfare (EW) Systems: Implement signal camouflage and interference suppression in 110 GHz electronic countermeasures.

- High-Frequency Radar: Used in scenarios such as missile guidance and stealth target detection, improving system signal-to-noise ratio.

 

4. Test and Measurement

- Chip and Device Testing: Provide precise attenuation calibration for millimeter-wave RF ICs and terahertz sensors.

- Laboratory R&D: Support system error correction for vector network analyzers (VNAs) below 110 GHz.

 

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Market Outlook

1. 5G/6G Drives Demand:

- According to ABI Research, the number of millimeter-wave 5G base stations worldwide will exceed 2 million by 2027, driving a compound annual growth rate (CAGR) of 18% for the high-frequency attenuator market.

- With 6G R&D focusing on the terahertz frequency band, 110 GHz devices will become a necessity for test equipment and prototypes.

 

2. Satellite Communications Explosion:

- According to an NSR report, demand for high-throughput satellite capacity will increase sevenfold between 2023 and 2032, with the Ka/V-band device market exceeding $5 billion.

 

3. Increased Defense Spending:

- Countries are accelerating the deployment of high-frequency electronic warfare systems, with the US 2024 Defense Budget projecting a 12% year-on-year increase in RF device procurement.

 

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Technology Development Trends

1. Higher Frequency Band Expansion: Next-generation attenuators will reach 170 GHz and even 300 GHz, covering the entire terahertz window.

2. Integrated Solutions: Combined with amplifiers and switches to form an "RF front-end module" to reduce system complexity.

3. New Material Applications: Gallium nitride (GaN) and silicon-based terahertz (SiGe) processes are expected to further increase power density.

 

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Industry Voices

- Communications Expert:

"The maturity of the 110 GHz attenuator signals that the RF industry has established a foundation for terahertz commercialization, accelerating the 6G standardization process." — Dr. Michael Xie, 6G Research Alliance

- Defense Contractor:

"High-power millimeter-wave devices are at the core of next-generation electronic warfare. Such products will directly enhance battlefield spectrum control capabilities." — Lockheed Martin Radio Frequency Division

 

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Conclusion

The launch of the 1-watt 110 GHz attenuator is not only a technological breakthrough in the RF device field, but also accelerates the maturation of the millimeter-wave and terahertz ecosystems. With the explosive growth of industries such as 5G-A/6G, satellite internet, and intelligent sensing, the high-frequency, high-power attenuator market is expected to exceed US$1 billion by 2030, becoming a new growth engine for the semiconductor industry.